STN690A

High performance low voltage NPN transistor

STMicroelectronics

STN690A Features

* Very low collector to emitter saturation voltage

* DC current gain, hFE > 100

* 3 A continuous collector current t(s)

* 40 V breakdown voltage V(BR)CER

* SOT-223 plastic package for surface mounting uccircuits in tape and reel packaging rodApplications te P

* Power manageme

STN690A General Description

cThe device in manufactured in low voltage NPN uplanar technology by using a “Base Island” layout. dThe resulting transistor shows exceptional high rogain performance coupled with very low Obsolete Psaturation voltage. 4 3 2 1 SOT-223 Figure 1. Internal schematic diagram Table 1. Device summary O.

STN690A Datasheet (129.67 KB)