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STP30N06 Datasheet - STMicroelectronics

STP30N06 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N06 STP30N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.05 Ω < 0.05 Ω ID 30 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 www.DataSheet4U.com APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOL.

STP30N06_STMicroelectronics.pdf

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Datasheet Details

Part number:

STP30N06

Manufacturer:

STMicroelectronics ↗

File Size:

227.27 KB

Description:

N-channel enhancement mode power mos transistor.

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STP30N06 STP30N06 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR STMicroelectronics

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