STP3N150 Datasheet (STMicroelectronics)

STP3N150, N-channel MOSFET

These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process.

The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.

Product status link STFW3N150 STH3N150-2 STP3N150 STW3N150

STP3N150 Features

* Order codes VDS RDS(on) max. ID PTOT STFW3N150 63 W STH3N150-2 1500 V 9Ω STP3N150 2.5 A 140 W STW3N150

* 100% avalanche tested

* Intrinsic capacitances and Qg minimized

* High speed switching

* Fully isolated TO-3PF plastic package, creepage distance pa