STP40N60M2 - N-CHANNEL MOSFET
* 6 AM01476v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gat
STP40N60M2 Features
* Order codes VDS @ TJmax RDS(on) max ID STB40N60M2 STP40N60M2 650 V 0.088 Ω 34 A STW40N60M2
* Extremely low gate charge
* Lower RDS(on) x area vs previous generation
* Low gate input resistance
* 100% avalanche tested
* Zener-protected Figure 1. Internal
