STP4N52K3 Datasheet - STMicroelectronics

STP4N52K3 N-channel Power MOSFET

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitab.

STP4N52K3 Features

* Order codes VDSS RDS(on) max ID Pw STD4N52K3 STF4N52K3 STP4N52K3 STU4N52K3 525 V < 2.6 Ω 2.5 A 45 W 2.5 A 20 W (1) 2.5 A 45 W 2.5 A 45 W 1. Limited by package

* 100% avalanche tested

* Extremely high dv/dt capability

* Gate charge minimized

* Very low intrinsic capacitance

STP4N52K3-STMicroelectronics.pdf