STP4NM60 Datasheet (STMicroelectronics)

STP4NM60, N-channel Power MOSFET

PModems technology applies the benefits of the temultiple drain process to STMicroelectronics' well- known PowerMESH™ horizontal layout structure.

leThe resulting product offers low on-resistance, sohigh dv/dt capability and excellent avalanche Obcharacteristics.

3 2 1 TO-220 3 1 DPAK IPAK 3 2 1

STP4NM60 Features

* Type VDSS RDS(on) (@Tjmax) max )STD3NM60 t(sSTD3NM60-1 650 < 1.5 Ω cSTP4NM60 ID 3A 4A PW 42 W 69 W rodu

* High dv/dt and avalanche capabilities te P

* Improved ESD capability le

* Low input capacitance and gate charge o

* Low gate input resistance bs

* Tight process control