Description
These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure.
Features
- Order codes STB5N62K3 STD5N62K3 STF5N62K3 STP5N62K3 STU5N62K3.
- VDSS
RDS(on) max. ID
Pw
3
3 1
1 2
70 W 620 V < 1.6 Ω 4.2 A 25 W 70 W
1
2
3
TO-220
DPAK
TO-220FP
100% avalanche tested Extremely large avalanche performance Gate charge minimized Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1.
3 1
1
3 2
D²PAK
IPAK
Internal schematic diagram
D(2).