STR2N2VH5

N-channel Power MOSFET

STMicroelectronics

STR2N2VH5 Features

* 3 1 SOT-23 2 Order code VDS RDS(on) max ID PTOT STR2N2VH5 20 V 0.03 Ω (VGS=4.5 V) 2.3 A 0.35 W

* Low on-resistance RDS(on)

* High avalanche ruggedness

* Low gate drive power loss Applications

* Switching applications Figure 1. Internal schematic diagram Desc

STR2N2VH5 General Description

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. Order code STR2N2VH5 Table 1. Device summary Marking Packages S.

STR2N2VH5 Datasheet (441.70 KB)