Datasheet Details
Part number:
STU11NC60
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File Size:
119.19 KB
Description:
N-channel Power MOSFET
N-CHANNEL 600V - 0.48Ω - 11A Max220 PowerMesh™ II MOSFET TYPE STU11NC60 www.DataSheet4U.com s TYPICAL s s s s STU11NC60 VDSS 600V RDS(on) < 0.55Ω ID 11 A RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED Max220 1 2 3 DESCR
STU11NC60_STMicroelectronics.pdf
STU11NC60, N-channel Power MOSFET
The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ .
The layout refinements introduced greatly improve the Ron *area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
APPLICATIONS s HIGH CURRENT, HIG
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