STU16N65M2 - N-channel Power MOSFET
This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology.
Thanks to its strip layout and an improved vertical structure, the device AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high effic
STU16N65M2 Features
* TAB Order code VDS RDS(on) max. ID STU16N65M2 650 V 360 mΩ 11 A 3 2 1
* Extremely low gate charge
* Excellent output capacitance (Coss) profile IPAK
* 100% avalanche tested
* Zener-protected D(2, TAB) Applications
* Switching applications G
