STU16N65M2 Datasheet - STMicroelectronics

STU16N65M2 N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology. Thanks to its strip layout and an improved vertical structure, the device AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high effic.

STU16N65M2 Features

* TAB Order code VDS RDS(on) max. ID STU16N65M2 650 V 360 mΩ 11 A 3 2 1

* Extremely low gate charge

* Excellent output capacitance (Coss) profile IPAK

* 100% avalanche tested

* Zener-protected D(2, TAB) Applications

* Switching applications G

STU16N65M2-STMicroelectronics.pdf