TN2010H-6FP

High temperature 20A SCRs

STMicroelectronics

TN2010H-6FP Features

* High junction temperature: Tj = 150 °C

* High noise immunity dV/dt = 400 V/µs up to 150 °C

* Gate triggering current IGT = 10 mA

* Peak off-state voltage VDRM/VRRM = 600 V

* High turn-on current rise dI/dt = 100 A/µs

* ECOPACK®2 compliant component

* TO-220FPAB insulate

TN2010H-6FP General Description

Packaged in an insulated TO-220FPAB, this device offers high thermal performance during operation of up to 20 ARMS, thanks to a junction temperature of up to 150 °C. This insulated fullpack package allows a back to back configuration. The combination of noise immunity and low gate triggering curre.

TN2010H-6FP Datasheet (242.06 KB)