TN2015H-6FP

SCRs

STMicroelectronics

TN2015H-6FP Features

* High junction temperature: Tj = 150 °C

* High noise immunity dV/dt = 750 V/µs up to 150 °C

* Gate triggering current IGT = 15 mA

* Blocking voltage VDRM/VRRM = 600 V

* High turn on current rise dI/dt: 100 A/µs

* ECOPACK®2 compliant component

TN2015H-6FP General Description

Thanks to a junction temperature Tj up to 150 °C and an insulated TO-220FPAB package, the TN2015H-6FP offers high thermal performance operation up to 20 A rms. The trade-off between the device’s noise immunity (dV/dt = 750 V/µs), its gate triggering current (IGT = 15 mA) and its turn-on current rise.

TN2015H-6FP Datasheet (208.31 KB)