* D Low On-Resistance: 9.5 W D Secondary Breakdown Free: 220 V D Low Power/Voltage Driven D Low Input and Output Leakage D Excellent Thermal Stability Benefits D Low Offset Voltage D Full-Voltage Operation D Easily Driven Without Buffer D Low Error Voltage D No High-Temperature “Run-Away” Applicatio
TN2010T
Siliconix
41.73 KB
N-channel enhancement-mode mosfet transistor.
TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V(BR)DSS Min (V) 200 rDS(on) Max (W) 11 VGS(th) (V) 0.8 to 3.0 ID (A) 0.12 .
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Vishay Siliconix
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| IRFP044PBF |
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