TN2010T N-Channel Enhancement-Mode MOSFET Transistor

Siliconix

Description

TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V(BR)DSS Min (V) 200 rDS(on) Max (W) 11 VGS(th) (V) 0.8 to 3.0 ID (A) 0.12 .

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Datasheet Specifications

Part number: TN2010T
Manufacturer: Siliconix
File Size: 41.73 KB
Datasheet: TN2010T-Siliconix.pdf
Description: N-Channel Enhancement-Mode MOSFET Transistor

Features

* D Low On-Resistance: 9.5 W D Secondary Breakdown Free: 220 V D Low Power/Voltage Driven D Low Input and Output Leakage D Excellent Thermal Stability Benefits D Low Offset Voltage D Full-Voltage Operation D Easily Driven Without Buffer D Low Error Voltage D No High-Temperature “Run-Away” Applicatio

Applications

* D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control TO-236 (SOT-23) G1 S2 3D Top View TN2010T (R1)
* Marking Code for TO-236 Absolute Maximum Ratings (TA = 25_C Unles

TN2010T Distributors

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TN2010T N-Channel Enhancement-Mode MOSFET Transistor Siliconix

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