VNB35N07 Datasheet - STMicroelectronics

VNB35N07 FULLY AUTOPROTECTED POWER MOSFET

) The VNP35N07FI, VNB35N07 and VNV35N07 t(s are monolithic devices made using STMicroelectronics VIPower M0 Technology, uc intended for replacement of standard power d MOSFETS in DC to 50 KHz applications. Built-in ro thermal shut-down, linear current limitation and P overvoltage clamp protect the c.

VNP35N07FI ® VNB35N07/VNV35N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V c la mp RDS( o n ) Ilim VNP35N07FI 70 V 0.028 Ω 35 A VNB35N07 70 V 0.028 Ω 35 A VNV35N07 70 V 0.028 Ω 35 A ) s LINEAR CURRENT LIMITATION t(s s THERMAL SHUT DOWN c s SHORT CIRCUIT PROTECTION u s INTEGRATED CLAMP d s LOW CURRENT DRAWN FROM INPUT PIN ro s DIAGNOSTIC FEEDBACK THROUGH INPUT P PIN te s ESD PROTECTION s DIRECT ACCESS TO THE GATE OF THE le POWER MOSFET (ANALOG DRIVING) so s COMPATIBLE W.

VNB35N07 Features

* During normal operation, the Input pin is - OVERTEMPERATURE AND SHORT CIRCUIT electrically connected to the gate of the internal PROTECTION: these are based on sensing power MOSFET. The device then beha

VNB35N07_STMicroelectronics.pdf