VNB10N07 Datasheet - STMicroelectronics

VNB10N07 FULLY AUTOPROTECTED POWER MOSFET

The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect BLOCK DIA.

VNB10N07/K10N07FM ® VNP10N07FI/VNV10N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 Vclamp 70 V 70 V 70 V 70 V RDS(on) 0.1 Ω 0.1 Ω 0.1 Ω 0.1 Ω Ilim 10 A 10 A 10 A 10 A s LINEAR CURRENT LIMITATION s THERMAL SHUT DOWN s SHORT CIRCUIT PROTECTION s INTEGRATED CLAMP s LOW CURRENT DRAWN FROM INPUT PIN s DIAGNOSTIC FEEDBACK THROUGH INPUT PIN s ESD PROTECTION s DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) s COMPATIBLE WITH STANDARD P.

VNB10N07 Features

* During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user’s standpoint is that a small DC current (Iiss) flows into t

VNB10N07_STMicroelectronics.pdf