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W11NK100Z Datasheet - STMicroelectronics

W11NK100Z, STW11NK100Z

STW11NK100Z N-CHANNEL 1000V - 1.1Ω - 8.3A TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STW11NK100Z 1000 V < 1.38 Ω 8.3 A.
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
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W11NK100Z-STMicroelectronics.pdf

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Datasheet Details

Part number:

W11NK100Z

Manufacturer:

STMicroelectronics ↗

File Size:

287.28 KB

Description:

STW11NK100Z

Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

Applications

* Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES ORDERING INFORMATION SALES TYPE STW11NK100Z MARKING W11NK100Z PACKAGE TO-247

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