* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta
W11NK100Z Datasheet (287.28 KB)
W11NK100Z
287.28 KB
Stw11nk100z.
STW11NK100Z
N-CHANNEL 1000V - 1.1Ω - 8.3A TO-247 Zener-Protected SuperMESH™Power MOSFET
TYPE
VDSS RDS(on)
ID
Pw
STW11NK100Z 1000 V < 1.38 Ω 8.3 A.
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