SPC1018 Datasheet - SYNC POWER

SPC1018 N & P Pair MOSFET

The SPC1018 is the N- and P-Dual Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are parti.

SPC1018 Features

* N-Channel 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V

* P-Channel -20V/0.45A,RDS(ON)=520mΩ@VGS=-4.5V -20V/0.35A,RDS(ON)=700mΩ@VGS=-2.5V -20V/0.25A,RDS(ON)=1500mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS(ON)

SPC1018 Datasheet (471.00 KB)