SPC1810 Datasheet (SYNC POWER)

SPC1810, N & P Pair MOSFET

The SPC1810 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particular

SPC1810 Features

* N-Channel 100V/5A,RDS(ON)=160mΩ@VGS=10V

* P-Channel -100V/-8A,RDS(ON)=160mΩ@VGS=-10V -100V/-4A,RDS(ON)=200mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOP

* 8 package design PIN C