SPN1012 Datasheet - SYNC POWER

SPN1012 N-Channel MOSFET

The SPN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suit.

SPN1012 Features

* N-Channel 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-523 (SC-89) package design PIN CONFIGURATION

SPN1012_SYNCPOWER.pdf