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SPN1022

Dual N-Channel MOSFET

SPN1022 Features

* N-Channel 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* ESD protected

* SOT-563 (SC-89-6L) package de

SPN1022 General Description

The SPN1022 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly.

SPN1022 Datasheet (338.04 KB)

Preview of SPN1022 PDF

Datasheet Details

Part number:

SPN1022

Manufacturer:

SYNC POWER

File Size:

338.04 KB

Description:

Dual n-channel mosfet.

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SPN1022 Dual N-Channel MOSFET SYNC POWER

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