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SPN166T06

N-Channel MOSFET

SPN166T06 Features

* 60V/166A,RDS(ON)=3.0mΩ@VGS=10V RDS(ON)=4.5mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L/TO-220F-3L/PPAK5x6-8L package design PIN CONFIGURATION TO-220 TO-220F PPAK 5x6 PART MARKING

SPN166T06 General Description

The SPN166T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectif.

SPN166T06 Datasheet (445.45 KB)

Preview of SPN166T06 PDF

Datasheet Details

Part number:

SPN166T06

Manufacturer:

SYNC POWER

File Size:

445.45 KB

Description:

N-channel mosfet.

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TAGS

SPN166T06 N-Channel MOSFET SYNC POWER

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