SPN166T06 Datasheet (SYNC POWER)

SPN166T06, N-Channel MOSFET

The SPN166T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suitable for synchronous rectif

SPN166T06 Features

* 60V/166A,RDS(ON)=3.0mΩ@VGS=10V RDS(ON)=4.5mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L/TO-220F-3L/PPAK5x6-8L package design PIN CONFIGURATION TO-220 TO-220F PPAK 5x6 PART MARKING