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SPN166N06

N-Channel MOSFET

SPN166N06 Features

* 60V/166A,RDS(ON)=3.1mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L/TO-252-2L/PPAK5x6-8L/ TOLL-8 package design PIN CONFIGURATION TO-220 TO-220F TO252 PPAK5x6 TOLL8 PART MARKING 2024/

SPN166N06 General Description

The SPN166N06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier ap.

SPN166N06 Datasheet (432.64 KB)

Preview of SPN166N06 PDF

Datasheet Details

Part number:

SPN166N06

Manufacturer:

SYNC POWER

File Size:

432.64 KB

Description:

N-channel mosfet.

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TAGS

SPN166N06 N-Channel MOSFET SYNC POWER

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