SPN3446 - N-Channel MOSFET
The SPN3446 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such a
SPN3446 Features
* 20V/6.0A,RDS(ON)=33mΩ@VGS=4.5V
* 20V/5.0A,RDS(ON)=38mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23-6L package design PIN CONFIGURATION( SOT
* 23-6L ) 2020/02/19 Ver.2 PART M
