SPN4506 Datasheet (SYNC POWER)

SPN4506, N-Channel MOSFET

The SPN4506 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application , note

SPN4506 Features

* 40V/10A,RDS(ON)=10mΩ@VGS=10V

* 40V/ 8A,RDS(ON)=12mΩ@VGS=4.5V

* 40V/ 6A,RDS(ON)=16mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOP

* 8 package design APPLICATIONS

* Power Ma