SPN4392 Datasheet (SYNC POWER)

SPN4392, N-Channel MOSFET

The SPN4392 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application , note

SPN4392 Features

* 30V/22A,RDS(ON)= 8mΩ@VGS=10V 30V/18A,RDS(ON)= 12mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP

* 8P package design PIN CONFIGURATION(SOP

* 8P) PART MARKING 2007/07/20 Ver.1 Page 1 SP