SPN4392W Datasheet (SYNC POWER)

SPN4392W, N-Channel MOSFET

The SPN4392W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application , not

SPN4392W Features

* 30V/13A,RDS(ON)=8mΩ@VGS=10V

* 30V/10A,RDS(ON)=12mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOP

* 8 package design APPLICATIONS

* Power Management in Note book

* Portable