SPN4856 - N-Channel Enhancement Mode MOSFET
The SPN4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, notebo
SPN4856 Features
* 40V/8A,RDS(ON)=9mΩ@VGS=10V
* 40V/4A,RDS(ON)=13.5mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOP
* 8 package design PIN CONFIGURATION(SOP
* 8) 2023/07/24 Ver 4 PART MARKING
