SPN4856 Datasheet - SYNC POWER

SPN4856 N-Channel Enhancement Mode MOSFET

The SPN4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebo.

SPN4856 Features

* 40V/8A,RDS(ON)=9mΩ@VGS=10V

* 40V/4A,RDS(ON)=13.5mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOP

* 8 package design PIN CONFIGURATION(SOP

* 8) 2023/07/24 Ver 4 PART MARKING

SPN4856 Datasheet (333.79 KB)

SPN4856 Datasheet Preview — Preview of SPN4856 PDF

Datasheet Details

Part number:

SPN4856

Manufacturer:

SYNC POWER

File Size:

333.79 KB

Description:

N-channel enhancement mode mosfet.

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SPN4856 N-Channel Enhancement Mode MOSFET SYNC POWER

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