SPN55T20 - N-Channel Enhancement Mode MOSFET
The SPN55T20 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook
SPN55T20 Features
* 200V/42A,RDS(ON)=32mΩ@VGS=10V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* TO-220-3L/TO-252-2L/PPAK5x6-8L package design PIN CONFIGURATION(PPAK5x6-8L) TO-220-3L TO-252-2L PPAK5x6-8L PART MARKING 202
