SPN6336 Datasheet - SYNC POWER

SPN6336 Dual N-Channel MOSFET

The SPN6336 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly.

SPN6336 Features

* N-Channel 20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* ESD protected

* SOT-363 (SC-70-6L) package de

SPN6336 Datasheet (342.63 KB)