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SPN6338A Datasheet - SYNC POWER

SPN6338A Dual N-Channel Enhancement Mode MOSFET

The SPN6338A is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularl.

SPN6338A Features

* N-Channel 20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* ESD protected

* SOT-363 (SC-70-6L) package de

SPN6338A Datasheet (342.88 KB)

SPN6338A Datasheet Preview — Preview of SPN6338A PDF

Datasheet Details

Part number:

SPN6338A

Manufacturer:

SYNC POWER

File Size:

342.88 KB

Description:

Dual n-channel enhancement mode mosfet.

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Stock and price

Toshiba America Electronic Components

TCR2EE11,LM(CT

3748 In Stock

Qty : 1000 units

Unit Price : $0.05

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SPN6338A Dual N-Channel Enhancement Mode MOSFET SYNC POWER

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