SPN6338A - Dual N-Channel Enhancement Mode MOSFET
The SPN6338A is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularl
SPN6338A Features
* N-Channel 20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* ESD protected
* SOT-363 (SC-70-6L) package de
