SPN6338 Datasheet - SYNC POWER

SPN6338 Dual N-Channel MOSFET

The SPN6338 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly.

SPN6338 Features

* N-Channel 30V/0.95A,RDS(ON)=550mΩ@VGS=4.5V 30V/0.75A,RDS(ON)=650mΩ@VGS=2.5V 30V/0.65A,RDS(ON)=850mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* ESD protected

* SOT-363 (SC-70-6L) package de

SPN6338 Datasheet (345.33 KB)

SPN6338 Datasheet Preview — Preview of SPN6338 PDF

Datasheet Details

Part number:

SPN6338

Manufacturer:

SYNC POWER

File Size:

345.33 KB

Description:

Dual n-channel mosfet.

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SPN6338 Dual N-Channel MOSFET SYNC POWER

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