SPN8830 - N-Channel Enhancement Mode MOSFET
The SPN8830 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
The SPN8830 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM con
SPN8830 Features
* PIN CONFIGURATION(PPAK5x6-8L)
* 30V/100A,RDS(ON)=1.3mΩ@VGS=10V
* 30V/100A,RDS(ON)=2.0mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* PPAK5x6-8L package design PART MARKING 2024/01/18Ver 1.0
