SPN8810 - N-Channel MOSFET
The SPN8810 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , note
SPN8810 Features
* 100V/74A,RDS(ON)=8.0mΩ@VGS=10V
* 100V/74A,RDS(ON)=10.5mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* PPAK5x6-8L package design PIN CONFIGURATION(PPAK5x6-8L) 2023/07/13 Ver 4 PART MARKING
