SPN8822 - Dual N-Channel MOSFET
The SPN8822 is the Common-Drain Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
SPN8822 Features
* 20V/8.0A,RDS(ON)=24mΩ@VGS=4.5V
* 20V/7.0A,RDS(ON)=32mΩ@VGS=2.5V
* 20V/3.0A,RDS(ON)=42mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* TSSOP
* 8 package design PIN CONFIGURATION(TSS
