SPN8812 - N-Channel MOSFET
The SPN8812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
The SPN8812 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM con
SPN8812 Features
* 100V/63A,RDS(ON)=9.8mΩ@VGS=10V
* 100V/63A,RDS(ON)=13.0mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* PPAK5x6-8L package design PIN CONFIGURATION(PPAK5x6-8L) PART MARKING 2023/07/17 Ver 3
