SPP2301W - P-Channel MOSFET
The SPP2301W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such
SPP2301W Features
* -20V/-2.4A,RDS(ON)=128mΩ@VGS=-4.5V
* -20V/-2.0A,RDS(ON)=188mΩ@VGS=-2.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23 package design PIN CONFIGURATION(SOT-23) 2020/01/08 Ver.2 PART MARKING S
