SPP2345 - P-Channel MOSFET
The SPP2345 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such a
SPP2345 Features
* -20V/-3.3A,RDS(ON)=70mΩ@VGS=-4.5V
* -20V/-2.8A,RDS(ON)=85mΩ@VGS=-2.5V
* -20V/-2.3A,RDS(ON)=130mΩ@VGS=-1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23 package design PIN CONFIGURATION(SOT
