* Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-89 Package. D D SOT-89 S D G G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a TA=25°C TA=70°C IDM -Pulsed b
SDK03N04 Datasheet (112.84 KB)
SDK03N04
SamHop Microelectronics
112.84 KB
N-channel mosfet.
SDK03N04Green
Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.3
PRODUCT SUMMARY
VDSS
ID RDS(ON) .
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