* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D2 D2 PIN1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 D1 PDFN 5x6 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Ga
SP2106
SamHop Microelectronics
106.18 KB
Dual n-channel enhancement mode field effect transistor.
Green Product SP2106 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V I.
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