* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D1 D1 D2 D2 DFN 3x3 PIN1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Co
SP2112
SamHop Microelectronics
115.21 KB
Dual n-channel enhancement mode field effect transistor.
Green Product SP2112 Ver 1.0 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V I.
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