* Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. PDFN 5x6 PIN1 D2 5 D2 6 D1 7 D1 8 4 G2 3 S2 2 G1 1 S1 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol VDS VGS ID IDM EAS PD Parameter Drain-Source Voltage Gate-Source Volta
SP2108
SamHop Microelectronics
102.68 KB
Dual n-channel mosfet.
Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SP2108 Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(O.
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