* Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. D1 D1 D2 D2 PDFN 5x6 PIN1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TA=25°C
SP2700
SamHop Microelectronics
107.72 KB
Dual n-channel enhancement mode field effect transistor.
Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SP2700 Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(O.
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