* Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D1/D2 DFN 3X3 PIN 1 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c IDM
SP2030
SamHop Microelectronics
90.78 KB
Dual n-channel enhancement mode field effect transistor.
Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SP2030 Ver 2.1 PRODUCT SUMMARY VDSS 20V ID R.
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