Part number:
SP203
Manufacturer:
Polyfet RF Devices
File Size:
34.58 KB
Description:
Silicon gate enhancement mode rf power vdmos transistor.
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 12.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25
SP203
Polyfet RF Devices
34.58 KB
Silicon gate enhancement mode rf power vdmos transistor.
📁 Related Datasheet
SP200 +5V High-Speed RS-232 Transceivers with 0.1mF Capacitors (Sipex)
SP200F (SP200F / SP250F) Rectifier Stacks (VMI)
SP200S (SP200S / SP250S) Rectifier Stacks (VMI)
SP201 Offline Current Mode PWM Controller (SPMICRO)
SP201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
SP20100R 20.0 Amp Schottky Barrier Rectifiers (SeCoS)
SP2013 P-Channel Enhancement Mode Field Effect Transistor (SamHop)
SP20150 VOLTAGE 150V 20.0AMP Schottky Barrier Rectifiers (SeCoS)
SP20150R 20.0 Amp Schottky Barrier Rectifiers (SeCoS)
SP202 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
