* Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. 87 65 DFN 5x6 PIN1 12 34 ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c TC=25°C TC=70°
SP4510DG
SamHop Microelectronics
91.81 KB
N-channel logic level enhancement mode field effect transistor.
SP4510DGGreen Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS .
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