* Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. Pin 1 TSON 3.3 x 3.3 D5 D6 D7 D8 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C ID Drain Current-Contin
SP4412
SamHop Microelectronics
111.92 KB
N-channel enhancement mode field effect transistor.
Green Product Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SP4412 Ver 1.1 PRODUCT SUMMARY VDSS ID RDS(ON) (m.
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