* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. P in 1 TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Li
SP8076
SamHop Microelectronics
75.55 KB
N-channel enhancement mode field effect transistor.
Green Product SP8076 Ver 2.1 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 33V ID 27A .
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