SP8006 - N-Channel Enhancement Mode Field Effect Transistor
SP8006 Features
* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-So
