• Part: SP8005
  • Description: N-Channel Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: SamHop Microelectronics
  • Size: 111.29 KB
Download SP8005 Datasheet PDF
SamHop Microelectronics
SP8005
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. P in 1 5 6 7 8 4 3 2 1 TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b ad Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 32 25.6 96 a Units V V A A A W W °C Maximum Power Dissipation 1.67 1.07 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a °C/W Details are subject to change without notice. Sep,13,2013 .samhop..tw Ver 2.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage...