* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gat
SP8009EL Datasheet (101.86 KB)
SP8009EL
SamHop Microelectronics
101.86 KB
N-channel enhancement mode field effect transistor.
Green Product
SP8009EL
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
33V
ID
24.
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